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Spatial ALD is emerging as a critical technology for the deposition of thin films for advanced memory and logic selective processing found in gate-all-around FETs, high aspect ratio contacts, DRAM capacitors, advanced NVM technology, and even self-aligned double patterning (SADP) lithography. It has the promise of high throughput, highly conformal thin films using low temperature and low or no vacuum processing chambers. However spatial ALD has challenges, gas mixing, platform rotation speed optimization, optimized gas purge flow, the variable concentration of reactant gases and safety considerations are some of the issues process engineers are working to optimize. Atonarp’s Aston in-situ metrology solution will be reviewed and its key differentiations, being used by several spatial ALD OEMs to address these challenges, will be discussed.
What you’ll learn:
Spatial ALD advantages and challenges
Why speed with sensitivity and robustness matter in Spatial ALD metrology solutions
Aston Impact and Plasma metrology solutions and differentiation that is leading them to be used as key in-situ process control metrology in spatial ALD applications
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